EM-Simulation of Planar Inductor Performance for Epitaxial Silicon Processes
نویسندگان
چکیده
A 2.5D EM-simulator has been used to study how planar inductor performance is influenced by an epitaxial substrate. The simulation model used has been adjusted and verified by measurements on an octagonal inductor fabricated in a submicron CMOS technology. The impact of the epitaxial layer has been studied by sweeping it’s permittivity, thickness, and resistivity. The results show that typical epitaxial substrates have a significant and detrimental effect on inductor performance.
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تاریخ انتشار 2000